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T2550H-600T
HIGH TEMPERATURE TRIAC FOR HOT APPLIANCES
MAIN FEATURES : HIGH JUNCTION TEMPERATURE: Tj (MAX) = 150C IT(RMS) = 25 A VDRM/VRRM = 600 V SENSITIVITY : IGT (MAX) = 50mA DESCRIPTION Specifically developed for use in high temperature and harsh environments, the T2550H-600T triac is perfectly suited to driving heating elements found in hot appliances such as ovens, electric ranges or halogen ranges. The T2550H-600T, which is specified for use in temperature up to Tj = 150 C, offers the additional benefit of improved thermal resistance (1 C/W). Thanks to this feature, heatsink dimensionning can be optimized to suit typical conditions in such applications. The devices surge features, which have proven to be highly performing, ensure safe operation under peak inrush current conditions for example, in halogen ranges. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Repetitive peak-off state voltage Value Unit
A2 A1
A2
A1
A2
G
TO-220
VRRM VDRM IT(RMS) ITSM
Tj = 150 C Tc = 120 C tp = 8.3 ms tp = 10 ms
600 25 260 250 310 20 100 - 40 to + 150
V A A
RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C )
2
I2t dI/dt
I t Value for fusing Critical rate of rise of on-state current (Tj initial = 25 C) IG = 60 mA tr 100ns
tp = 10 ms Repetitive F = 50 Hz Non Repetitive
A2s A/s
Tstg Tj
Storage and operating junction temperature range
C
June 1999 - Ed: 1
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T2550H-600T
THERMAL RESISTANCES
Symbol Parameter Junction to case for DC Junction to case for AC 360 conduction angle (F = 50 Hz) Value Unit
Rth(j-c) Rth(j-c)
1.3 1
C/W C/W
GATE CHARACTERISTICS PG(AV) = 1 W PGM = 10 W (tp = 20 s) IGM = 4 A (tp = 20 s)
Symbol
Test Conditions VD=12V (DC) RL=33
Quadrant
Value
Unit
IGT
Tj = 25 C
I - II - III
MIN MAX
5 50 1.3 0.15 75 90 1.5 5 8.5 5.5 250 10 7
mA
VGT VGD IH IL VTM IDRM IRRM
VD=12V (DC) VD=VDRM IT= 500 mA IG = 1.2 IGT ITM = 35 A VD = VDRM VR = VRRM
RL=33
Tj = 25 C Tj = 150 C Tj = 25 C Tj = 25 C
I - II - III I - II - III
MAX MIN MAX
V V mA mA V A mA
RL=3.3 k Gate open
I - II - III
MAX MAX MAX MAX MAX MIN MIN
tp = 380 s
Tj = 25 C Tj = 25 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C
VD / VR = 400 V (operating application conditions)
dV/dt (dI/dt)c
VD= 67% VDRM (dV/dt)c = 5 V/s Without snubber
Gate open
V/s A/ms
ORDER INFORMATION
T
Triac
25
Current
50
H
-
600
Voltage
T
Package T: TO-220
High Gate Sensitivity Temperature Triac
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T2550H-600T
Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact.
P(W) 35 30 25 20 15 10 5 0 0.0
= 30 = 60 = 90 = 120 = 180
P(W) 35
Rth=3C/W Rth=2C/W Rth=1C/W
Tcase (C)
Rth=0C/W
30 25 20 15 10 5
= 180
120
130
140
IT(RMS)(A) 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
Tamb(C) 25 50 75 100 125 150
150
0
0
Fig. 3: RMS on-state current versus case temperature.
Fig. 4: Relative variation of thermal impedance versus pulse duration.
IT(RMS)(A) 30 25 20 15 10 5 Tcase(C) 0 0 25 50 75 100 125 150
0.10
= 180
K=[Zth/Rth] 1.00
Zth(j-c)
Zth(j-a)
tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
Fig. 6: Surge peak on-state current versus number of cycles.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0 1.5
IH & IL IGT
ITSM(A) 220 200 180 160 140 120 100 80 60 40 20 0
Tj initial=25C F=50Hz
Non repetitive
1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 160
Repetitive
Number of cycles 1 10 100 1000
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T2550H-600T
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values).
ITSM(A),It(As) 2000
Tj initial=25C
ITM(A) 300
ITSM
1000
dI/dt limitation: 100A/s
100
Tj=Tj max.
It
100
10
Tj=25C
Tj max.: Vto = 0.85 V Rd = 19 m
tp(ms) 10 0.01 0.10 1.00 10.00
VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature (typical values).
Fig. 10: Typical variation of leakage current versus junction temperature for different values of blocking voltage.
(dI/dt)c [Tj]/(dI/dt)c [Tj = 150C] 8 7 6 5 4 3 2 1 0 25 50 75 Tj(C) 100 125 150
1E-2 1E-1 1E+0 1E+1
IDRM/IRRM(mA)
VD=VR=600V
VD=VR=400V VD=VR=200V
Tj(C) 1E-3 50 75 100 125 150
Fig. 11: Acceptable repetitive peak off state voltage versus thermal resistance case-ambient.
VDRM/VRRM(V) 800 700 600 500 400 300 200 100 0 0 2 4 6 Rth(c-a)(C/W) 8 10 12 14 16 18 20
Tj=150C Rth(j-c)=1C/W
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T2550H-600T
PACKAGE MECHANICAL DATA TO-220 (Plastic)
B C
DIMENSIONS REF. Millimeters Min. Typ. Max. Min. Inches Typ. Max.
b2
L F I A
A a1 a2 B b1 b2 C c1 c2 e
15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60
15.90 0.598 0.147 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 0.102
0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066
l4
a1
c2
l3
l2 a2
F I I4 L
15.80 16.40 16.80 0.622 0.646 0.661
b1 e
M c1
l2 l3 M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com
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